lead-free green source e q uivalent circuit gate protection diode gate d ra i n ds30049 rev. 6 - 2 1 of 3 dmn100 www.diodes.com diodes incorporated dmn100 n-channel enhancement mode field effect transistor features extremely low on-resistance: 170m @v gs = 4.5v high drain current: 1.1a ideal for notebook computer, portable phone, pcmcia cards, and battery powered circuits lead free by design/rohs compliant (note 2) qualified to aec-q101 standards for high reliability esd protected gate "green" device (note 3) maximum ratings @ t a = 25 c unless otherwise specified characteristic symbol dmn100 units drain-source voltage v dss 30 v gate-source voltage continuous v gss 20 v drain current continuous pulsed i d 1.1 4.0 a total power dissipation p d 500 mw thermal resistance, junction to ambient r ja 250 k/w operating and storage temperature range t j ,t stg -55 to +150 c notes: 1. pulse width 300 s, duty cycle 2%. 2. no purposefully added lead. 3. diodes inc.'s "green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. case: sc-59 case material - molded plastic, "green" molding compound. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: finish matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 terminal connections: see diagram marking: see last page ordering & date code information: see last page weight: 0.008 grams (approximate) mechanical data a e j l m b c h g d k top view d s g sc-59 dim min max a 0.30 0.50 b 1.40 1.80 c 2.50 3.00 d 0.85 1.05 e 0.30 0.70 g 1.70 2.10 h 2.70 3.10 j 0.10 k 1.00 1.40 l 0.55 0.70 m 0.10 0.35 all dimensions in mm e s d protected
ds30049 rev. 6 - 2 2 of 3 dmn100 www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 1) drain-source breakdown voltage bv dss 30 v v gs = 0v, i d = 250 a zero gate voltage drain current @ t j = 25 c @t j = 125 c i dss 1.0 10 a v ds = 24v, v gs = 0v gate-body leakage i gss 100 na v gs = 12v, v ds = 0v on characteristics (note 1) gate threshold voltage v gs(th) 1.0 3.0 v v ds = 10v, i d =1.0ma static drain-source on-resistance r ds (on) 0.170 0.240 v gs = 4.5v, i d = 0.5a v gs = 10v, i d = 1.0a forward transconductance g fs 1.3 2.4 s v ds = 10v, i d =0.5a dynamic characteristics input capacitance c iss 150 pf v ds = 10v, v gs = 0v f = 1.0mhz output capacitance c oss 90 pf reverse transfer capacitance c rss 30 pf total gate charge q g 5.5 nc v ds = 24v, i d = 1.0a, v gs = 10v gate-to-source charge q gs 0.8 nc gate-to-drain charge q gd 1.3 nc switching characteristics turn-on delay time t d(on) 10 ns v dd = 10v, i d = 0.5a, v gs = 5.0v, r gen = 50 turn-off delay time t d(off) 25 ns turn-on rise time t r 15 ns turn-off fall time t f 45 ns source- drain ratings (body diode) continuous source current i s 0.54 a pulse source current i sm 4.0 a forward voltage v sd 1.2 v i f = 1.0a, v gs = 0v reverse recovery time t rr 35 ns i f = 1.0a, di/dt = 50a/ s notes: 1. pulse width 300 s, duty cycle 2%. 0 0.5 1.0 01 2 3 4 5 i , drain current (a) d v , drain-source voltage (v) fig. 1 on-region characteristics ds 3.0v 2.5v 1.5 2.0 2.5 3.0 3.5 4.0 v = 10v 5.0v 4.5v 4.0v 3.5v gs 0.01 0.1 1.0 0 1 2 3 4 r,n o rmalized drain-source on-resistance ds(on) i , drain current (a) fig. 2 on-resistance vs drain current d v=4.5v gs v=10v gs
ds30049 rev. 6 - 2 3 of 3 dmn100 www.diodes.com ordering information (note 4) device packaging shipping DMN100-7-F sc-59 3000/tape & reel notes: 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information 0 0.05 0.10 -50 r,n o rmalized drain-source on-resistance ds(on) t , junction temperature ( c) fig. 3 on-resistance vs junction temperature j v=4.5v,r gs ds @0.5a v = 10v, r gs ds @1.0a 0 50 150 100 0.15 0.20 0.25 0.30 0 0.5 1.0 1.5 2.0 2.5 01 v , gate to source voltage (v) fig. 4 on-resistance vs gate-source voltage gs v=10v gs t=25c a 3.0 3.5 2345 4.0 r,n o rmalized drain-source on-resistance ds(on) m11 ym m11 = product type marking code ym = date code marking y = year ex: t = 2006 m = month ex: 9 = september date code key year 2006 2007 2008 2009 code tu vw month jan feb mar apr may jun jul aug sep oct nov dec code 1234567 89 o nd important notice life support diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes witho ut further notice to any product herein. diodes incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on our website, harmless against all damages. diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written appr oval of the president of diodes incorporated.
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